Datasheet DMTH4008LFDFWQ (Diodes) - 2

DMTH4008LFDFWQ Marking Information
8W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025)
YM
M = Month (ex: 9 = September) DMTH4008LFDFWQ-7 DMTH4008LFDFWQ-13 8W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September) DMTH4008LFDFWQ-7R DMTH4008LFDFWQ-13R Date Code Key
Year 2017 - 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 Code
E - M N P R S T U V W X
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code
1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V TA = +25°C 11.6 Continuous Drain Current (Note 5) VGS = 10V ID A TA = +100°C 8.2 Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 80 A Continuous Source-Drain Diode Current (Note 5) IS 2.55 A Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%) ISM 80 A Avalanche Current, L = 0.3mH (Note 6) IAS 14.7 A Avalanche Energy, L = 0.3mH (Note 6) EAS 32.4 mJ Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. DMTH4008LFDFWQ 2 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
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