Datasheet 1N916 (ON Semiconductor) - 2

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1N91x, 1N4x48, FDLL914, FDLL4x48 ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted) (Note 1)
Rating Symbol Value Unit
Maximum Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current If 400 mA Non−repetitive Peak Forward Surge Current Pulse Width = 1.0 s IFSM 1.0 A Pulse Width = 1.0 ms 4.0 A Storage Temperature Range TSTG −65 to +200 °C Operating Junction Temperature Range TJ −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS Parameter Symbol Max Unit
Power Dissipation PD 500 mW Thermal Resistance, Junction−to−Ambient RqJA 300 °C
ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted) (Note 2)
Symbol Parameter Conditions Min Max Unit
VR Breakdown Voltage IR = 100 mA 100 V IR = 5.0 mA 75 V VF Forward Voltage 914B / 4448 IF = 5.0 mA 0.62 0.72 V 916B IF = 5.0 mA 0.63 0.73 V 914 / 916 / 4148 IF = 10 mA 1.0 V 914A / 916A IF = 20 mA 1.0 V 916B IF = 20 mA 1.0 V 914B / 4448 IF = 100 mA 1.0 V IR Reverse Leakage VR = 20 V 0.025 mA VR = 20 V, TA = 150°C 50 mA VR = 75 V 5.0 mA CT Total Capacitance 916/916A/916B/4448 VR = 0, f = 1.0 MHz 2.0 pF 914/914A/914B/4148 VR = 0, f = 1.0 MHz 4.0 pF trr Reverse Recovery Time IF = 10 mA, VR = 6.0 V (600 mA) 4.0 ns Irr = 1.0 mA, RL = 100 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Non−recurrent square wave PW = 8.3 ms.
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