Datasheet DMMT3904W (Diodes) - 3

DMMT3904W Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60   V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 8) BVCEO 40   V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0   V IE = 100µA, IC = 0 Collector Cutoff Current ICEX   50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL   50 nA VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 8)
40  IC = 100µA, VCE = 1.0V 70  IC = 1.0mA, VCE = 1.0V DC Current Gain hFE 100  300  IC = 10mA, VCE = 1.0V 60  IC = 50mA, VCE = 1.0V 30  IC = 100mA, VCE = 1.0V 200 IC = 10mA, IB = 1.0mA Collector-Emitter Saturation Voltage VCE(sat)   mV 300 IC = 50mA, IB = 5.0mA 650 850 IC = 10mA, IB = 1.0mA Base-Emitter Saturation Voltage V  BE(sat)  mV 950 IC = 50mA, IB = 5.0mA
MATCHING CHARACTERISTICS
DC Current Gain Matching (Note 9) hFE1 / hFE2  1 2 % IC = 2mA, VCE = 5V Base-Emitter Voltage Matching (Note 10) VBE1 - VBE2  1 2 mV IC = 2mA, VCE = 5V VCE(sat)1 / Collector-Emitter Saturation Voltage (Note 9)  1 2 % IC = 10mA, IB = 1.0mA VCE(sat)2 VBE(sat)1 / Base-Emitter Saturation Voltage (Note 9)  1 2 % IC = 10mA, IB = 1.0mA VBE(sat)2
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo   4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo   8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0  10 kΩ Voltage Feedback Ratio hre 0.5  8 x 10-4 VCE = 10V, IC = 1.0mA, Small Signal Current Gain h f = 1.0kHz fe 100  400  Output Admittance hoe 1.0  40 µS V Current Gain-Bandwidth Product f CE = 20V, IC = 10mA, T 300   MHz f = 100MHz VCE = 5.0V, IC = 100µA, Noise Figure NF   5.0 dB RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td   35 ns VCC = 3.0V, IC = 10mA, Rise Time t V r   35 ns BE(on) = -0.5V, IB1 = 1.0mA Storage Time ts   200 ns VCC = 3.0V, IC = 10mA, Fall Time t IB1 = -IB2 = 1.0mA f   50 ns Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 9. Is the ratio of one transistor compared to the other transistor. 10. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor. DMMT3904W 3 of 6 June 2022 Document number: DS30311 Rev. 15 - 2
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