Datasheet DMMT3904WQ (Diodes) - 3

DMMT3904WQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60 — — V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 8) BVCEO 40 — — V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0 — — V IE = 100µA, IC = 0 Collector Cutoff Current ICEX — — 50 nA VCE = 30V, VEB(off) = 3.0V Base Cutoff Current IBL — — 50 nA VCE = 30V, VEB(off) = 3.0V
ON CHARACTERISTICS (Note 8)
40 — IC = 100µA, VCE = 1.0V 70 — IC = 1.0mA, VCE = 1.0V DC Current Gain hFE 100 — 300 — IC = 10mA, VCE = 1.0V 60 — IC = 50mA, VCE = 1.0V 30 — IC = 100mA, VCE = 1.0V — 200 IC = 10mA, IB = 1.0mA Collector-Emitter Saturation Voltage VCE(sat) — mV 300 IC = 50mA, IB = 5.0mA 650 850 IC = 10mA, IB = 1.0mA Base-Emitter Saturation Voltage VBE(sat) — — mV 950 IC = 50mA, IB = 5.0mA
MATCHING CHARACTERISTICS
DC Current Gain Matching (Note 9) hFE1 / hFE2 — 1 2 % IC = 2mA, VCE = 5V Base-Emitter Voltage Matching (Note 10) VBE1 - VBE2 — 1 2 mV IC = 2mA, VCE = 5V VCE(sat )1 Collector-Emitter Saturation Voltage (Note 9) / — 1 2 % IC = 10mA, IB = 1.0mA VCE(sat)2 VBE(sat)1 Base-Emitter Saturation Voltage (Note 9) / — 1 2 % IC = 10mA, IB = 1.0mA VBE(sat)2
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO — — 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance CIBO — — 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hIE 1.0 — 10 kΩ Voltage Feedback Ratio hRE 0.5 — 8 x 10-4 VCE = 10V, IC = 1.0mA, Small Signal Current Gain f = 1.0kHz hFE 100 — 400 — Output Admittance hOE 1.0 — 40 µS V Current Gain-Bandwidth Product f CE = 20V, IC = 10mA, T 300 — — MHz f = 100MHz VCE = 5.0V, IC = 100µA, Noise Figure NF — — 5.0 dB RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time tD — — 35 ns VCC = 3.0V, IC = 10mA, Rise Time t VBE(off) = -0.5V, IB1 = 1.0mA R — — 35 ns Storage Time tS — — 200 ns VCC = 3.0V, IC = 10mA, Fall Time t IB1 = -IB2 = 1.0mA F — — 50 ns Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 9. Is the ratio of one transistor compared to the other transistor. 10. VBE1 - VBE2 is the absolute difference of one transistor compared to the other transistor. DMMT3904WQ 3 of 6 July 2020 Document number: DS42397 Rev. 1 - 2
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