Datasheet RJU003N03 (Rohm)

2.5V Drive Nch MOSFET
RJU003N03
zDimensions (Unit : mm) zStructure
Silicon N-channel MOSFET UMT3
2.0 0.9 zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive). 0.7 0.2 0.3 2.1 1.25 (3) 1.3 (1) Source zApplications
Switching Each lead has same dimensions (2) Gate
Abbreviated symbol : LP (3) Drain zPackaging specifications and hFE
Package
Type 0.15 0.1Min. (1) (2) 0.65 0.65 zInner circuit Taping Code T106 Basic ordering unit (pieces) 3000 (3) RJU003N03
∗2 (2) ∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE (1) Source
(2) Gate
(3) Drain zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current Continuous
Pulsed Total power dissipation
Channel temperature
Range of storage temperature Symbol
VDSS
VGSS
ID
IDP ∗1
PD ∗2
Tch
Tstg Limits
30
±12
±300
±1.2
200
150
−55 to +150 Unit
V
V
mA
A
mW
°C
°C Symbol
Rth(ch-a) ∗ Limits
625 Unit
°C/W ∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land www.rohm.com
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○ 1/4 2009.03 -Rev.A