Datasheet RJU003N03 (Rohm) - 2

Data Sheet RJU003N03
zElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th) Parameter −
30
−
0.8
−
−
−
0.4
−
−
−
−
−
−
− −
−
−
−
0.8
0.9
1.4
−
24
11
5
6
4
9
32 ±10
−
1
1.5
1.1
1.3
1.9
−
−
−
−
−
−
−
− Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time RDS (on)∗ Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf ∗ ∗
∗
∗
∗ Unit
µA
V
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns Conditions
VGS=±12V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 300mA, VGS= 4.5V
ID= 300mA, VGS= 4V
ID= 300mA, VGS= 2.5V
VDS= 10V, ID= 300mA
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 150mA
VGS= 4V
RL=100Ω
RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage Symbol Min. Typ. Max. VSD − − 1.2 www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
○ Unit
V Conditions
IS= 200mA, VGS=0V 2/4 2009.03 -Rev.A