Datasheet PMV65XPEA (Nexperia) - 4

Nexperia PMV65XPEA 20 V, P-channel Trench MOSFET
017aaa123 120 017aaa124 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature
aaa-012866 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 10 µs tp = 100 µs -1 tp = 1 ms tp = 10 ms DC; Tsp = 25 °C tp = 100 ms -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2-10-1 -1 -102 -10 VDS (V) IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage
PMV65XPEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 27 November 2014 4 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information