Datasheet PMV65XPEA (Nexperia) - 8

Nexperia PMV65XPEA 20 V, P-channel Trench MOSFET
aaa-003872 -12 017aaa129 - 10- 3 -3.5 V -3.0 V -4.5 V VGS = -2.8 V ID -8.0 V ID (A) (A) -2.5 V -8 - 10- 4 (1) (2) (3) -2.2 V -4 - 10- 5 -1.8 V 0 - 10- 6 0 -1 -2 -3 -4 0.0 - 0.5 - 1.0 - 1.5 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V
Fig. 6. Output characteristics: drain current as a
(1) minimum values
function of drain-source voltage; typical values
(2) typical values (3) maximum values
Fig. 7. Sub-threshold drain current as a function of gate-source voltage
aaa-003873 300 aaa-012875 0.3 RDSon -1.8 V V RDSon (mΩ) GS = -2.2 V -2.5 V (Ω) 200 0.2 -2.8 V T -3.0 V j = 150 °C 100 0.1 -3.5 V -4.5 V -8.0 V Tj = 25 °C 0 0 0 -4 -8 -12 0 -1 -2 -3 -4 -5 ID (A) VGS (V) Tj = 25 °C ID = -2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
PMV65XPEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 27 November 2014 8 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information