link to page 1 PMV65XPE20 V, P-channel Trench MOSFET25 April 2014Product data sheet1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very fast switching • Enhanced power dissipation capability: Ptot = 890 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM 3. Applications • Relay driver • High speed line driver • High-side loadswitch • Switching circuits 4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.3 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 67 78 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
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