Datasheet PMV65XPE (Nexperia) - 4

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Nexperia PMV65XPE 20 V, P-channel Trench MOSFET
aaa-012866 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 10 µs tp = 100 µs -1 tp = 1 ms tp = 10 ms DC; Tsp = 25 °C tp = 100 ms -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2-10-1 -1 -102 -10 VDS (V) IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance in free air [1] - 230 260 K/W from junction to [2] - 120 140 K/W ambient in free air; t ≤ 5 s [2] - 85 100 K/W Rth(j-sp) thermal resistance - 15 20 K/W from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV65XPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 25 April 2014 4 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information