Datasheet PMV65XPE (Nexperia) - 8

Nexperia PMV65XPE 20 V, P-channel Trench MOSFET
aaa-003875 -12 aaa-012877 2.0 a ID (A) 1.5 -8 1.0 -4 0.5 Tj = 150 °C Tj = 25 °C 0 0 0 -1 -2 -3 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical function of gate-source voltage; typical values values
aaa-003877 -1.5 aaa-012878 103 Ciss VGS(th) C (V) max (pF) -1.0 102 Coss typ Crss min -0.5 10 0.0 1 -60 0 60 120 180 -10-1 -1 -102 -10 Tj (°C) VDS (V) ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values
PMV65XPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 25 April 2014 8 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information