Datasheet PMV65XPE (Nexperia) - 9

Nexperia PMV65XPE 20 V, P-channel Trench MOSFET
aaa-012879 -5 V VDS GS (V) -4 ID VGS(pl) -3 VGS(th) -2 VGS QGS1 QGS2 -1 QGS QGD QG(tot) 017aaa137 0 0 2 4 6
Fig. 15. MOSFET transistor: Gate charge waveform
QG (nC)
definitions
ID = -2.8 A; VDS = -10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate charge; typical values
aaa-003880 -5 IS (A) -4 -3 -2 -1 Tj = 150 °C Tj = 25 °C 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VDS (V) VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
PMV65XPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 25 April 2014 9 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information