Datasheet PMV65ENEA (Nexperia) - 3

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Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 40 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 2.7 A VGS = 10 V; Tamb = 100 °C [1] - 1.7 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 11 A EDS(AL)S non-repetitive drain-source Tj(init) = 25 °C; ID = 0.3 A; DUT in - 6.5 mJ avalanche energy avalanche (unclamped) Ptot total power dissipation Tamb = 25 °C [2] - 490 mW [1] - 940 mW Tsp = 25 °C - 6.25 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 0.91 A
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 3 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information