Datasheet PMV65ENEA (Nexperia) - 4

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Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET
017aaa123 120 017aaa124 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature
aaa-022633 102 ID (A) Limit R 10 DSon = VDS/ID tp = 10 µs 100 µs 1 DC; Tsp = 25 °C 1 ms DC; Tamb = 25 °C; 10 ms 10-1 drain mounting pad 6 cm2 100 ms 10-210-1 1 102 10 VDS (V) IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance in free air [1] - 221 254 K/W from junction to [2] - 116 133 K/W ambient PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 4 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information