Datasheet PMV65ENEA (Nexperia) - 9

Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET
aaa-022644 10 V VDS GS (V) I 8 D VGS(pl) 6 VGS(th) 4 VGS QGS2 QGS1 2 QGS QGD QG(tot) 003aaa508 0
Fig. 15. MOSFET transistor: Gate charge waveform
0 1 2 3 4 5 QG (nC)
definitions
VDS = 20 V; ID = 2.7 A
Fig. 14. Gate-source voltage as a function of gate charge; typical values
aaa-022645 0.8 IS (A) 0.6 0.4 Tj = 150 ºC Tj = 25 ºC 0.2 0 0 0.4 0.8 1.2 VSD (V) VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information
t1 P duty cycle δ = t t 2 2 t1 t 006aaa812
Fig. 17. Duty cycle definition
PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 9 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information