Datasheet PMV65UNEA (Nexperia) - 4

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Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET
017aaa123 120 017aaa124 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature
aaa-022685 102 ID (A) Limit R 10 DSon = VDS/ID tp = 10 µs 100 µs 1 1 ms 10 ms DC; Tsp = 25 °C 100 ms 10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-210-1 1 102 10 VDS (V) IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance in free air [1] - 221 254 K/W from junction to ambient [2] - 116 133 K/W Rth(j-sp) thermal resistance - 17 20 K/W from junction to solder point PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 4 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents