Datasheet PMV65XP (Nexperia) - 3

Nexperia PMV65XP 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit
Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tsp = 25 °C - -1.6 A [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 017aaa124 120 Pder Ider (%) (%) 80 80 40 40 0 0 - 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175 Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of junction temperature
PMV65XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 12 February 2013 3 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information