Si4936DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET 0.037 @ VGS = 10 V 5.8 30 0.055 @ VGS = 4.5 V 4.7 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 G1 G2 S2 3 6 D2 G2 4 5 D2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA = 25C 5.8 Continuous Drain Current (TJ (T = 150 J = C)A C) ID I TA = 70C 4.6 A Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)A IS 1.7 TA = 25C 2 Maximum Power Dissi pationA ation PD P W D TA = 70C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C Maximum Junction-to-AmbientA RthJA 62.5 C/W Notes A. Surface Mounted on FR4 Board, t 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70150. For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 3-1
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