Datasheet FDMA430NZ (ON Semiconductor)
Производитель | ON Semiconductor |
Описание | Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ |
Страниц / Страница | 7 / 1 — DATA SHEET. www.onsemi.com. VDS. RDS(on) MAX. ID MAX. General … |
Формат / Размер файла | PDF / 242 Кб |
Язык документа | английский |
DATA SHEET. www.onsemi.com. VDS. RDS(on) MAX. ID MAX. General Description. onsemi. Features. WDFN6 2x2, 0.65P. (MicroFET 2x2). CASE 511CZ

43 предложений от 19 поставщиков MOSFET N-CH 30V 5A MICROFET. N-Channel 30V 5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2). Transistors - FETs, MOSFETs - Single... |
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| FDMA430NZ
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DATA SHEET www.onsemi.com
MOSFET – Single, N-Channel,
VDS RDS(on) MAX ID MAX
POWERTRENCH), 30 V 40 mW @ 4.5 V 5.0 A 2.5 V Specified 50 mW @ 2.5 V 30 V, 5.0 A, 40 m
W
Pin 1 D D G Source FDMA430NZ Drain
General Description
This Single N−Channel MOSFET has been designed using
onsemi
’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.5 V on special MicroFETt leadframe. D D S
Features
Bottom • RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
WDFN6 2x2, 0.65P
•
(MicroFET 2x2)
RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A
CASE 511CZ
• Low Profile − 0.8 mm Maximum in the New Package MicroFET 2x2 mm
MARKING DIAGRAM
• HBM ESD Protection Level > 2.5 kV Typical (Note 3) • Free from Halogenated Compounds and Antimony Oxides • This Device is Pb−Free, Halide Free and is RoHS Compliant &Z&2&K 430
Applications
• Li−lon Battery Pack &Z = Assembly Plant Code
ABSOLUTE MAXIMUM RATINGS
&2 = 2−Digit Date Code (TA = 25°C, unless otherwise noted) &K = 2−Digits Lot Run Traceability Code
Symbol Parameter Ratings Unit
430 = Specific Device Code VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage ±12 V
PIN ASSIGNMENT
ID Drain Current A − Continuous (Note 1a) 5.0 − Pulsed 20
S
4 3
G
PD Power Dissipation (Steady State) W − (Note 1a) 2.4 − (Note 1b) 0.9
D
5 2
D
TJ, TSTG Operating and Storage Junction −55 to +150 °C Temperature Range
D
6 1
D
Stresses exceeding those listed in the Maximum Ratings table may damage the Bottom Drain Contact device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
ORDERING INFORMATION Symbol Parameter Ratings Unit
R
Device Package Shipping
† qJA Thermal Resistance, Junction to Ambient 52 °C/W (Note 1a) FDMA430NZ WDFN6 3000 / R (Pb−Free, Tape & Reel qJA Thermal Resistance, Junction to Ambient 145 (Note 1b) Halide Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2023 − Rev. 3 FDMA430NZ/D