Datasheet FDMA430NZ (ON Semiconductor) - 4

FDMA430NZ TYPICAL CHARACTERISTICS
(continued) (TJ = 25°C unless otherwise noted) 5 1000 ID = 5.0 A C 4 iss
oltage (V)
VDS = 15 V 3 VDS = 10 V Coss 100 VDS = 20 V
−Source V
2
Capacitance (pF)
Crss
, Gate
1
V GS
f = 1 MHz V 0 10 GS = 0 V 0 2 4 6 8 10 0.1 1 10 30
Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage
100 5 10 ms 4 10 V 100 ms GS = 4.5 V 3 1 ms 1 VGS = 2.5 V OPERATION IN 10 ms 2
, Drain Current (A)
THIS AREA MAY BE 100 ms
, Drain Current (A) I D
0.1 LIMITED BY R
I D
DS(on) 1 s SINGLE PULSE 10 s 1 TJ = MAX RATED DC TA = 25°C R 0.01 0 qJA = 145°C/W 0.1 1 10 50 25 50 75 100 125 150
VDS, Drain to Source Voltage (V) TA, Ambient Temperature (
5
C) Figure 9. Safe Operating Area Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature
200 V 100 GS = 10 V TA = 25°C FOR TEMPERATURES ABOVE 25°C DERATE PEAK CURRENT AS FOLLOWS: 10
ransient Power (W)
SINGLE PULSE I Ǹ + I ƪ 150 * TAƫ 25 125
, Peak T K) P (P
1 0.5 10−4 10−3 10−2 10−1 100 101 102 103
t, Pulse Width (s) Figure 11. Single Pulse Maximum Power Dissipation www.onsemi.com 4