Datasheet BIDW50N65T (Bourns) - 3

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) Diode Switching Characteristics (TC = 25 °C, unless otherwise specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Reverse Recovery Time trr dlF/dt = 200 A/µs — 37.5 — ns I Reverse Recovery Charge Q F = 50.0 A rr — 78 — nC
Electrical Characteristic Performance Typical Output Characteristics Typical Output Characteristics
100 100 Common Emitter Common Emitter 90 TC = 25 °C 90 TC = 125 °C 80 VGE = 9 V 80 VGE = 9 V VGE = 11 V VGE = 11 V (A) 70 V (A) 70 V C GE = 13 V GE = 13 V V C V 60 GE = 15 V GE = 15 V V 60 GE = 17 V VGE = 17 V 50 50 40 40 30 30 Collector Current – I Collector Current – I 20 20 10 10 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector-emitter Voltage – VCE (V) Collector-emitter Voltage – VCE (V)
Typical Saturation Voltage Characteristics Typical Transfer Characteristics
200 100 Common Emitter Common Emitter 180 V V GE = 15 V CE = 7 V 160 80 T (A) 140 C = 25 °C C (A) C 60 120 100 TC = 125 °C 40 80 60 20 TC = 25 °C Collector Current – I Collector Current – I T 40 C = 125 °C 0 20 0 -20 0 1 2 3 4 5 6 0 5 10 15 Collector-emitter Voltage – VCE (V) Gate-emitter Voltage – VGE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.