Datasheet BIDW50N65T (Bourns) - 4

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical VCE(sat) vs VGE @ TC = 25 °C Typical VCE(sat) vs VGE @ TC = 125 °C
15 20 Common Emitter Common Emitter TC = 25 °C TC = 125 °C (V) (V) 16 CE(sat) I CE(sat) I 10 C = 25 A C = 25 A IC = 50 A IC = 50 A I 12 C = 100 A IC = 100 A 8 5 4 Collector-emitter Voltage – V Collector-emitter Voltage – V 0 0 4 8 12 16 20 4 9 14 19 Gate-emitter Voltage – VGE (V) Gate-emitter Voltage – VGE (V)
Typical VCE(sat) vs Case Temperature Typical Capacitance Characteristics
3.0 4500 Common Emitter Common Emitter VGE = 15 V 4000 VGE = 0 V, f = 1 MHz (V) 100 A Cies TC = 25 °C 2.5 3500 CE(sat) 3000 2500 2.0 50 A 2000 Coes Capacitance (pF) 1500 1.5 IC = 25 A 1000 Collector-emitter Voltage – V 500 Cres 1.0 0 25 50 75 100 125 1 10 100 Case Temperature – TC (°C) Collector-emitter Voltage – VCE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.