Datasheet BIDW50N65T (Bourns) - 5

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical Gate Charge Characteristics Typical Switching Time Characteristics vs RG
15 1000 Common Emitter TC = 25 °C td(off) 12 (V) GE ) tr 9 100 tf 6 td(on) Switching Time (ns Gate-emitter Voltage – V 3 VCC = 100 V Common Emitter VCC = 200 V VCC = 400 V, VGE = 15 V VCC = 300 V IC = 50 A, TC = 25 °C 0 10 0 50 100 150 5 15 25 35 45 55 Gate Charge – Qg (nC) Gate Resistance – RG (Ω)
Typical Switching Time Characteristics vs IC Typical Switching Loss vs RG
1000 10 Common Emitter Common Emitter VCC = 400 V, VGE = 15 V VCC = 400 V, VGE = 15 V RG = 10 Ω, TC = 25 °C IC = 50 A, TC = 25 °C 100 tf td(off) tr E(on) td(on) 10 Switching Time (ns) Switching Loss (mJ) E(off) 1 1 0 20 40 60 80 5 15 25 35 45 55 Collector Current – IC (A) Gate Resistance – RG (Ω) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.