BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)Electrical Characteristic Performance (continued)Inductive Load Test CircuitForward Bias Safe Operating Area 103 D L 102 10 µs (A) 100 µs C IC 1 ms VCE VCC 101 10 ms RG D.U.T. Collector Current – I 100 Note: VGE 1. Max. junction temperature: 150 °C 2. Max. reference temperature: 25 °C 10-1100 101 102 103 Collector-emitter Voltage – VCE (V) L = 1.12 mH, VCE = 400 V, VGE = 15 V, IC = 50 A, RG = 10 Ω How to OrderB I D W 50 N 65 TEnvironmental Characteristics B = Bourns® ESD Class (HBM) ...2 I = IGBT Type D = Discrete Package Code W = TO-247-3L Current Rating 50 = 50 A Device Type N = N-channel Nominal Voltage (divided by 10) 65 = 650 V Optimization T = Medium Speed Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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