BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)Product Dimensions E A SymbolMin.Nom.Max. P DIA. Q A2 A 4.80 5.00 5.20 (.189) (.197) (.205) A1 2.21 2.41 2.59 (.087) (.095) (.102) E2 D A2 1.85 2.00 2.15 (.073) (.079) (.085) b 1.11 (.044) — 1.36 (.054) L1 b2 1.91 (.075) — 2.25 (.089) L b4 2.91 (.115) — 3.25 (.128) c 0.51 b2 b c A1 (.020) — 0.75 (.030) b4 e D 20.80 21.00 21.30 (.819) (.827) (.839) MM DIMENSIONS: 15.80 16.10 (INCHES) E 15.50 (.610) (.622) (.634) E2 4.40 5.00 5.20 (.173) (.197) (.205) Packaging Specifications BIDW50N65T ... 30 pieces per tube e 5.44 BSC (.214) L 19.72 19.92 20.22 (.776) (.784) (.796) L1 — — 4.30 (.169) P 3.40 (.134) — 3.80 (.150) Q 5.60 5.80 6.00 (.220) (.228) (.236) Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com REV. 04/23 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Купить BIDW50N65T на РадиоЛоцман.Цены — от 203 до 490 ₽
