Datasheet AOK40B65M3 (Alpha & Omega)

AOK40B65M3 650V,40A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary
• Latest AlphaIGBT (α IGBT) technology VCE 650V • 650V breakdown voltage IC (TC=100°C) 40A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.95V • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness
Applications
• Motor Drives • Welding Machines • UPS and Solar Inverters • Other hard switching applications
Top View
C
TO-247
G E E C G
AOK40B65M3 Orderable Part Number Package Type Form Minimum Order Quantity
AOK40B65M3 TO247 Tube 240
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOK40B65M3 Units
Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C 80 I C A Current TC=100°C 40 Pulsed Collector Current, Limited by TJmax I CM 120 A Turn off SOA, VCE 650V, Limited by T ≤ Jmax I LM 120 A Continuous Diode TC=25°C 34 I F A Forward Current TC=100°C 17 Diode Pulsed Current, Limited by TJmax I FM 120 A Short circuit withstanding time 1) t SC 5 µs VGE = 15V, VCC 400V, T 175°C ≤ J ≤ TC=25°C 300 P D W Power Dissipation TC=100°C 150 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 °C
Thermal Characteristics Parameter Symbol AOK40B65M3 Units
Maximum Junction-to-Ambient R θ JA 40 °C/W Maximum IGBT Junction-to-Case R θ JC 0.5 °C/W Maximum Diode Junction-to-Case R θ JC 1.5 °C/W 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: April 2015
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