Datasheet AOK30B135W1 (Alpha & Omega) - 2

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 1350 - - V TJ=25°C - 1.8 2.2 V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=30A TJ=125°C - 2.3 - V TJ=175°C - 2.5 - TJ=25°C - 1.6 1.9 V F Diode Forward Voltage VGE=0V, IC=30A TJ=125°C - 1.73 V TJ=175°C - 1.74 - V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA 4.7 5.15 5.9 V TJ=25°C - - 10 I CES Zero Gate Voltage Collector Current VCE=1350V, VGE=0V T µ J=125°C - - 800 A TJ=175°C - - 8000 I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g Forward Transconductance V FS CE=20V, IC=30A - 31 - S
DYNAMIC PARAMETERS
C ies Input Capacitance - 1932 - pF C V oes Output Capacitance GE=0V, VCE=25V, f=1MHz - 107 - pF C res Reverse Transfer Capacitance - 32 - pF Q g Total Gate Charge - 62 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=1080V, IC=30A - 13 - nC Q gc Gate to Collector Charge - 29 - nC R g Gate resistance VGE=0V, VCE=0V, f=1MHz - 1.75 - Ω
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(off) Turn-Off Delay Time TJ=25°C - 129 - ns VGE=15V, VCE=600V, IC=30A, t f Turn-Off Fall Time - 148 - ns f RG=10 G=1 Ω 0 , E Turn-Off Energy Parasitic Inductance=150nH off - 1.47 - mJ
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
t TJ=175°C D(off) Turn-Off Delay Time - 154 - ns VGE=15V, VCE=600V, IC=30A, t f Turn-Off Fall Time - 208 - ns RG=10Ω, E Turn-Off Energy Parasitic Inductance=150nH off - 1.63 - mJ THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: January 2015
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