DatasheetsDatasheet FDD86110 (Inchange Semiconductor)
Datasheet FDD86110 (Inchange Semiconductor)
| Производитель | Inchange Semiconductor |
| Описание | N-Channel MOSFET Transistor in DPAK/TO-252 package |
| Страниц / Страница | 2 / 1 — isc N-Channel MOSFET Transistor. FDD86110. FEATURES. DESCRIPTION. … |
| Формат / Размер файла | PDF / 286 Кб |
| Язык документа | английский |
isc N-Channel MOSFET Transistor. FDD86110. FEATURES. DESCRIPTION. ABSOLUTE MAXIMUM RATINGS(Ta=25. SYMBOL. PARAMETER. VALUE. UNIT
41 предложений от 18 поставщиков MOSFET N-CH 100V 12.5A DPAK-3. N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252). Transistors -... |
| FDD86110
ON Semiconductor | 89 ₽ | |
| FDD86110
| 196 ₽ | |
| FDD86110
ON Semiconductor | 249 ₽ | |
| FDD86110
ON Semiconductor | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
isc N-Channel MOSFET Transistor FDD86110 FEATURES
·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10.2mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 127 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.98 ℃/W
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Document Outline isc N-Channel MOSFET Transistor FDD FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICAL CHARACTERISTICS
Купить FDD86110 на РадиоЛоцман.Цены — от 33 до 370 ₽
