Datasheet CPC3710 (Littelfuse)

CPC3710 250V N-Channel
INTEGRATED CIRCUITS DIVISION
Depletion-Mode FET V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) (BR)DGX
The CPC3710 is an N-channel, depletion-mode, field 250V 10 220mA SOT-89 effect transistor (FET) that utilizes IXYS Integrated P Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes
Features
world class, high voltage MOSFET performance • Low R at Cold Temperatures in an economical silicon gate process. Our vertical DS(on) • Low On-Resistance: 10 max. at 25ºC DMOS process yields a robust device, with high input • High Input Impedance impedance, for use in high-power applications. The • High Breakdown Voltage: 250V CPC3710 is a highly reliable FET device that has P • Low V Voltage: -1.6 to -3.9V been used extensively in our solid state relays for GS(off) • Small Package Size SOT-89 industrial and telecommunications applications. This device excels in power applications requiring
Applications
low drain-source resistance, particularly in cold environments such as automotive ignition modules. • Ignition Modules The CPC3710 offers a low, 10 maximum, on-state • Normally-On Switches resistance at 25ºC. • Solid State Relays • Converters The CPC3710 has a minimum breakdown voltage • Telecommunications of 250V , and is available in an SOT-89 package. • Power Supply P As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information Part # Description
CPC3710CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel)
Package Pinout Circuit Symbol
D D G G D S S (SOT-89) DS-CPC3710-R02
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