Datasheet CPC3710 (Littelfuse) - 3

INTEGRATED CIRCUITS DIVISION
CPC3710 PERFORMANCE DATA* Output Characteristics Transfer Characteristics V vs. Temperature GS(off) (T =25ºC) (V =5V) (V =10V, I =1mA) A DS DS D
300 350 0 270 V =0.0V -0.5 GS 300 240 +25ºC 210 250 -1.0 V =-1.0V GS 180 200
(V)
-1.5 150
(mA) (mA) I D
120
I D
150
GS(off)
-2.0 V =-1.5V +125ºC
V
90 GS 100 -2.5 60 -40ºC V =-2.0V 50 -3.0 30 GS 0 0 -3.5 0 1 2 3 4 5 6 -3.0 -2.5 -2.0 -1.5 -1.0 -40 -0 40 80 120
V (V) V (V) DS GS Temperature (ºC) R vs. Temperature Transconductance Vs. Drain Current ON Power Dissipation (V =0V, I =100mA) (V =10V) GS D vs. Ambient Temperature DS
14.0 1.6 300 -55ºC 12.0 1.4 250 1.2 +25ºC 10.0 200
)
1.0 : 8.0 : +125ºC
(
0.8 150
(m ) ON
6.0
wer (W) R o FS P
0.6
G
100 4.0 0.4 50 2.0 0.2 0 0.0 0 -40 -0 40 80 120 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 90 100
Temperature (ºC) Ambient Temperature (ºC) I (mA) D Capacitance vs. Drain Source Voltage On-Resistance vs. Drain Current Max Rated Safe Operating Area (V =-5V) (V =0V) GS GS
1 160 20 140 18 16 120 14 0.1 CISS 100
)
12 : 80
(
10
ON
60
R
8 0.01 6
Drain Current (A) Capacitance (pF)
40 C 4 OSS 20 C 2 RSS 0.001 0 0 0.1 1 10 100 1000 0 10 20 30 40 0 0.06 0.12 0.18 0.24 0.3
Drain-Source Voltage (V) V (V) I (A) DS D
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please contact our application department. R02
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