Datasheet MAT04 (Analog Devices)
| Производитель | Analog Devices |
| Описание | Matched Monolithic Quad Transistor |
| Страниц / Страница | 12 / 1 — Matched Monolithic. Quad Transistor. MAT04. FEATURES. PIN CONNECTIONS. … |
| Формат / Размер файла | PDF / 874 Кб |
| Язык документа | английский |
Matched Monolithic. Quad Transistor. MAT04. FEATURES. PIN CONNECTIONS. Low Offset Voltage: 200. V max. 14-Lead Cerdip (Y Suffix)

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| MAT-04FP Analog Devices | 63 ₽ | |
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Matched Monolithic Quad Transistor MAT04 FEATURES PIN CONNECTIONS Low Offset Voltage: 200
V max 14-Lead Cerdip (Y Suffix) High Current Gain: 400 min 14-Lead Plastic DIP (P Suffix) Excellent Current Gain Match: 2% max 14-Lead SO (S Suffix) Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/
√
Hz max Excellent Log Conformance: rBE = 0.6
⍀
max Matching Guaranteed for All Transistors Available in Die Form PRODUCT DESCRIPTION
verified to meet stated limits. Device performance is guaranteed The MAT04 is a quad monolithic NPN transistor that offers ex- at 25°C and over the industrial and military temperature ranges. cellent parametric matching for precision amplifier and nonlin- The long-term stability of matching parameters is guaranteed by ear circuit applications. Performance characteristics of the the protection diodes across the base-emitter junction of each MAT04 include high gain (400 minimum) over a wide range of transistor. These diodes prevent degradation of beta and match- collector current, low noise (2.5 nV/√Hz maximum at 100 Hz, ing characteristics due to reverse bias base-emitter current. IC = 1 mA) and excellent logarithmic conformance. The MAT04 also features a low offset voltage of 200 µV and tight The superior logarithmic conformance and accurate matching current gain matching, to within 2%. Each transistor of the characteristics of the MAT04 makes it an excellent choice for MAT04 is individually tested to data sheet specifications. For use in log and antilog circuits. The MAT04 is an ideal choice in matching parameters (offset voltage, input offset current, and applications where low noise and high gain are required. gain match), each of the dual transistor combinations are REV. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that
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