MAT04–SPECIFICATIONSELECTRICAL CHARACTERISTICS (@ TA = 25 ⴗ C unless otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS, ∆ hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)MAT04EMAT04FParameterSymbolConditionsMinTypMaxMinTypMaxUnit Current Gain hFE 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V1 400 800 300 600 Current Gain Match ∆hFE IC = 100 µA 0 V ≤ VCB ≤ 30 V2 0.5 2 1 4 % Offset Voltage VOS 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V3 50 200 100 400 µV Offset Voltage Change vs. ∆VOS/∆IC 10 µA ≤ IC ≤ 1 mA Collector Current VCB = 0 V3 5 25 10 50 µV Offset Voltage Change vs. VCB ∆VOS/∆VCB 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V3 50 100 100 200 µV Bulk Emitter Resistance rBE 10 µA ≤ IC ≤ 1 mA VCB = 0 V4 0.4 0.6 0.4 0.6 Ω Input Bias Current IB IC = 100 µA 0 V ≤ VCB ≤ 30 V 125 250 165 330 nA Input Offset Current IOS IC = 100 µA; VCB = 0 V 0.6 5 2 13 nA Breakdown Voltage BVCEO IC = 10 µA 40 40 V Collector Saturation Voltage VCE(SAT) IB = 100 µA; IC = 1 mA 0.03 0.06 0.03 0.06 V Collector-Base Leakage Current ICBO VCB = 40 V 5 5 pA Noise Voltage Density en VCB = 0 V; fO = 10 Hz 2 3 2 4 nV/√Hz IC = 1 mA; fO = 100 Hz 1.8 2.5 1.8 3 nV/√Hz fO = 1 kHz5 1.8 2.5 1.8 3 nV/√Hz Gain Bandwidth Product fT IC = 1 mA; VCE = 10 V 300 300 MHz Output Capacitance COBO VCB = 15 V; IE = 0 f = 1 MHz 10 10 pF Input Capacitance CEBO VBE = 0 V; IC = 0 f = 1 MHz 40 40 pF NOTES 1Current gain measured at IC = 10 µA, 100 µA and 1 mA. ∆ MIN IB h 2Current gain match is defined as: ∆h FE = 100( )( ) FE IC 3Measured at IC = 10 µA and guaranteed by design over the specified range of IC. 4Guaranteed by design. 5Sample tested. Specifications subject to change without notice. –2– REV. D
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