Datasheet MAT04 (Analog Devices) - 3

MAT04 ELECTRICAL CHARACTERISTICS (at –25
ⴗ
C
≤
TA
ⴞ
85
ⴗ
C for MAT04E, –40
ⴗ
C
≤
TA
ⴞ
85
ⴗ
C for MAT04F, unless otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.) MAT04E MAT04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Current Gain hFE 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V1 225 625 200 500 Offset Voltage VOS 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V2 60 260 120 520 µV Average Offset TCVOS IC = 100 µA Voltage Drift VCB = 0 V3 0.2 1 0.4 2 µV/°C Input Bias Current IB IC = 100 µA 0 V ≤ VCB ≤ 30 V 160 445 200 500 nA Input Offset Current IOS IC = 100 µA VCB = 0 V 4 20 8 40 nA Average Offset TCIOS IC = 100 µA Current Drift VCB = 0 V 50 100 pA/°C Breakdown Voltage BVCEO IC = 10 µA 40 40 V Collector-Base ICBO VCB = 40 V Leakage Current 0.5 0.5 nA Collector-Emitter ICES VCE = 40 V Leakage Current 5 5 nA Collector-Substrate ICS VCS = 40 V Leakage Current 0.7 0.7 nA REV. D –3–