Datasheet THAT 380G (THAT Corporation) - 3

THAT380G Matched Transistor Array Die Page 3 of 4 Document 600042 Rev 03
PNP Electrical Characteristics2 (cont'd)
Parameter Symbol Conditions Min Typ Max Units PNP Gain-Bandwidth Product fT IC = 1 mA, VCB = 10 V 325 MHz PNP ΔVBE (VBE1-VBE2; VBE7-VBE8) VOS IC = 1 mA — ±0.5 ±3 mV IC = 10 μA — ±0.5 mV PNP ΔIB (IB1-IB2; IB7-IB8) IOS IC = 1 mA — ±700 ±1800 nA IC = 10 μA — ±7 nA PNP Collector-Base Leakage Current ICBO VCB = 25 V — –25 — pA PNP Bulk Resistance rBE VCB = 0 V, 10μA < IC< 10 mA — 2 — Ω PNP Base Spreading Resistance rbb VCB = 10 V, IC = 1 mA — 25 — Ω PNP Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100 μA — –0.05 V PNP Output Capacitance COB VCB = 10 V, IE = 0 mA, 100 kHz 3 pF PNP Breakdown Voltage BVCEO IC = -10 μAdc, IB = 0 -36 -40 — V Input Capacitance CEBO IC = 0 mA, VEB = 0 V — 6 — pF -668.5 -477.5 -286.5 -95.5 0 95.5 286.5 477.5 668.5 T A 312 477.5 TH 411.5 286.5 17C1 18B 95.5 0 1232u -95.5 -286.5 -411.5 -477.5 Figure 2. Die dimensions 1. All specifications are subject to change without notice. 2. Unless otherwise noted, TA = 25ºC. 3. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress rati ngs only; the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2014, THAT Corporation. All rights reserved. Document Outline Home Features & Applications Description Ordering Information Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Revision History