Datasheet MPF102 (ON Semiconductor) - 2

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MPF102 ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Gate −Source Breakdown Voltage V(BR)GSS (IG = −10 mAdc, VDS = 0) −25 − Vdc Gate Reverse Current IGSS (VGS = −15 Vdc, VDS = 0) − −2.0 nAdc (VGS = −15 Vdc, VDS = 0, TA = 100C) − −2.0 mAdc Gate −Source Cutoff Voltage VGS(off) (VDS = 15 Vdc, ID = 2.0 nAdc) − −8.0 Vdc Gate −Source Voltage VGS (VDS = 15 Vdc, ID = 0.2 mAdc) −0.5 −7.5 Vdc
ON CHARACTERISTICS
Zero−Gate −Voltage Drain Current (Note 1) IDSS (VDS = 15 Vdc, VGS = 0 Vdc) 2.0 20 mAdc
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Note 1) yfs (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2000 7500 mmhos (VDS = 15 Vdc, VGS = 0, f = 100 MHz) 1600 − Input Admittance Re(yis) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) − 800 mmhos Output Conductance Re(yos) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) − 200 mmhos Input Capacitance Ciss (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) − 7.0 pF Reverse Transfer Capacitance Crss (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) − 3.0 pF 1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.
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