IRF9610 www.vishay.com Vishay Siliconix Power MOSFETFEATURES S • Dynamic dV/dt rating TO-220AB Available • P-channel G • Fast switching Available • Ease of paralleling • Simple drive requirements S • Material categorization: for definitions of compliance D G D please see www.vishay.com/doc?99912 P-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details VDS (V) -200 RDS(on) (Ω) VGS = -10 V 3.0 DESCRIPTION Qg max. (nC) 11 The power MOSFETs technology is the key to Vishay’s Qgs (nC) 7.0 advanced line of Power MOSFET transistors. The efficient Q geometry and unique processing of the Power MOSFETs gd (nC) 4.0 design achieve very low on-state resistance combined with Configuration Single high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9610PbF Lead (Pb)-free and halogen-free IRF9610PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOLLIMITUNIT Drain-source voltage VDS -200 V Gate-source voltage VGS ± 20 TC = 25 °C -1.8 Continuous drain current VGS at 10 V ID TC = 100 °C -1.0 A Pulsed drain current a IDM -7.0 Linear derating factor 0.16 W/°C Single pulse avalanche energy b PD 20 W Repetitive avalanche current a ILM -7.0 A Repetitive avalanche energy a dV/dt -5.0 V/ns Maximum power dissipation TC = 25 °C TJ, Tstg -55 to +150 °C Peak diode recovery dV/dt c 300 Operating junction and storage temperature range 10 lbf · in Soldering recommendations (peak temperature) d For 10 s 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) b. Not applicable c. ISD ≤ -1.8 A, dI/dt ≤ 70 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0867-Rev. C, 16-Aug-2021 1 Document Number: 91080 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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