IRF9610 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 6.4 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOLTESTCONDITIONSMIN.TYP.MAX.UNITStatic Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -200 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.23 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = -200 V, VGS = 0 V - - -100 Zero gate voltage drain current IDSS μA VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500 Drain-source on-state resistance RDS(on) VGS = -10 V ID = -0.90 A b - - 3.0 Ω Forward transconductance gfs VDS = -50 V, ID = -0.90 A b 0.90 - - S Dynamic Input capacitance Ciss V - 170 - GS = 0 V, Output capacitance Coss VDS = -25 V, - 50 - pF f = 1.0 MHz, see fig. 10 Reverse transfer capacitance Crss - 15 - Total gate charge Qg - - 11 I Gate-source charge Qgs V D = -3.5 A, VDS = -160 V, GS = -10 V - - 7.0 nC see fig. 11 and 18 b Gate-drain charge Qgd - - 4.0 Turn-on delay time td(on) - 8.0 - Rise time tr V - 15 - DD = -100 V, ID = -0.90 A, ns R Turn-off delay time t g = 50 Ω, RD = 110 Ω, see fig. 17 b d(off) - 10 - Fall time tf - 8.0 - Gate input resistance Rg f = 1 MHz, open drain 2.5 - 14.3 Ω Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 7.5 - S Drain-Source Body Diode Characteristics MOSFET symbol Continuous source-drain diode current I D S - - -1.8 showing the integral reverse A G Pulsed diode forward current a I p - n junction diode SM - - -7.0 S Body diode voltage VSD TJ = 25 °C, IS = -1.8 A, VGS = 0 V b - - -5.8 V Body diode reverse recovery time trr - 240 360 ns TJ = 25 °C, IF = -1.8 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 1.7 2.6 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0867-Rev. C, 16-Aug-2021 2 Document Number: 91080 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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