IRFP460 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS Top 15 V 10 V 8.0 V 7.0 V 150 °C 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 101 25 °C ain Current (A) ain Current (A) 4.5 V , Dr , Dr I D I D 20 µs Pulse Width 20 µs Pulse Width T = 25 °C 100 V = 50 V DS C 100 100 101 4 5 6 7 8 9 10 91237_01 VDS, Drain-to-Source Voltage (V) 91237_03 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °CFig. 3 - Typical Transfer Characteristics 3.5 VGS I = 20 A D Top 15 V V = 10 V GS 10 V 3.0 8.0 V 7.0 V 2.5 6.0 V 4.5 V 5.5 V 101 ed) 2.0 5.0 V Bottom 4.5 V maliz 1.5 ain Current (A) (Nor , Dr 1.0 I D ain-to-Source On Resistance , Dr 0.5 20 µs Pulse Width T = 150 °C C DS(on) 100 0.0 R 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91237_02 VDS, Drain-to-Source Voltage (V) 91237_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, TC = 150 °CFig. 4 - Normalized On-Resistance vs. Temperature S22-0058-Rev. B, 31-Jan-2022 3 Document Number: 91237 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000