Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 8
| Производитель | Efficient Power Conversion |
| Описание | Enhancement-Mode GaN Power Transistor Half Bridge |
| Страниц / Страница | 10 / 8 — EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| Формат / Размер файла | PDF / 1.4 Мб |
| Язык документа | английский |
EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. DIE MARKINGS. DIE OUTLINE
6 предложений от 2 поставщиков TRANS GAN 2N-CH 60V BUMPED DIE |
| EPC2102ENG
Efficient Power Conversion | от 639 ₽ | |
| EPC2102ENG
Efficient Power Conversion | по запросу | |
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EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet DIE MARKINGS
Laser Marking Part Number Part # Marking Lot_Date Code Lot_Date Code Line 1 Marking Line 2 Marking Line 3 EPC2102ENGR 21XX YYYY ZZZZ
DIE OUTLINE Solder Bar View Pad 2 is Gate1 ( high side); Pad 4 is Gate2 ( low side); Pad 3 is HS Gate Return; Pads 5, 14, 15, 24, 25, 34, 35, 43, 44, 35, 53, 54, 44, 63, 64, 65, 73, 74, 75 are Ground Pads 1, 11, 12, 13, 21, 22, 23, 31, 32, 33, 41, 42, 51, 52, 61, 62, 71, 72 are VIN Pads 3, 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29, 30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58, 59, 60, 66, 67, 68, 69, 70 are switch node. Side View
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 8
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