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Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 10

ПроизводительEfficient Power Conversion
ОписаниеEnhancement-Mode GaN Power Transistor Half Bridge
Страниц / Страница10 / 10 — EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary …
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Язык документаанглийский

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. RECOMMENDED PCB LAYOUT

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet RECOMMENDED PCB LAYOUT

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EPC2102

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EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet RECOMMENDED PCB LAYOUT Land pattern is solder mask defined
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PCB LAYOUT EXAMPLE Recommended PCB Layout
Gerber Files available at: http://epc-co.com/epc/documents/gerber-files/EPC9038%20Development%20Board%20Gerbers.zip Assembly Resources at: http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein. Preliminary specification sheet contains informaton regarding a product EPC is considering for production release. EPC does not assume any liability arising out of the application or use of any product or circuit described herin; neither does it convey any license under its patent rights, nor the rights of other. eGaN® is a registered trademark of Efficient Power Conversion Corporation. U.S. Patents 8,350,294; 8,404,508; 8,431,960; 8,436,398 Revised January, 2015 Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 10
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