NXP SemiconductorsProduct specificationSilicon N-channel dual-gate MOS-FETsBF998; BF998RFEATURES Short channel transistor with high forward transfer handbook, halfpage d admittance to input capacitance ratio 4 3 Low noise gain controlled amplifier up to 1 GHz. g2 g1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional 1 2 communications equipment. s,b Top view MAM039 DESCRIPTIONMarking code: MOp. Depletion type field effect transistor in a plastic Fig.1 Simplified outline (SOT143B) microminiature SOT143B or SOT143R package with and symbol; BF998. source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. d CAUTION handbook, halfpage 3 4 The device is supplied in an antistatic package. The g gate-source input must be protected against static 2 g discharge during transport or handling. 1 PINNING 2 1 PINSYMBOLDESCRIPTION s,b Top view MAM040 1 s, b source 2 d drain Marking code: MOp. 3 g2 gate 2 Fig.2 Simplified outline (SOT143R) 4 g1 gate 1 and symbol; BF998R. QUICK REFERENCE DATASYMBOLPARAMETERCONDITIONSTYP.MAX.UNIT VDS drain-source voltage 12 V ID drain current 30 mA Ptot total power dissipation 200 mW y fs forward transfer admittance 24 mS Cig1-s input capacitance at gate 1 2.1 pF Crs reverse transfer capacitance f = 1 MHz 25 fF F noise figure f = 800 MHz 1 dB Tj operating junction temperature 150 C 1996 Aug 01 2 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers
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