link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VDS drain-source voltage 12 V ID drain current 30 mA IG1 gate 1 current 10 mA IG2 gate 2 current 10 mA Ptot total power dissipation; BF998 up to Tamb = 60 C; see Fig.3; note 1 200 mW up to Tamb = 50 C; see Fig.3; note 2 200 mW Ptot total power dissipation; BF998R up to Tamb = 50 C; see Fig.4; note 1 200 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C Notes 1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2. Device mounted on a printed-circuit board. MLA198 MGA002 handbook, halfpage handbook, halfpage 200 200 P (2) (1) P tot max tot max (mW) (mW) 100 100 0 0 0 100 200 0 100 200 T T amb ( C) o amb (°C) (1) Ceramic substrate. (2) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug 01 3 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers
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