link to page 8 link to page 9 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R MGE808 MGE807 0 0 handbook, halfpage handbook, halfpage ΔGtr ΔGtr (dB) (dB) IDSS = −10 −10 max typ min −20 −20 −30 −30 I − DSS = 40 −40 max typ min −50 −50 0 2 4 6 8 10 0 2 4 6 8 10 Vagc (V) Vagc (V) VDD = 12 V; f = 200 MHz; Tamb = 25 C. VDD = 12 V; f = 800 MHz; Tamb = 25 C. Fig.19 Automatic gain control characteristics Fig.20 Automatic gain control characteristics measured in circuit of Fig.17. measured in circuit of Fig.18. 1996 Aug 01 10 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers
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