New ProductSi7611DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.058 ID = 9.3 A TJ = 150 °C 10 ) (Ω 0.048 (A) TJ = 25 °C 1 rrent u esistance C 0.038 -R rce u T 0.1 - On A = 125 °C - So I S DS(on) 0.028 R 0.01 TA = 25 °C 0.001 0.018 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source Voltage 2.4 60 50 2.1 40 ) (V (W th) 1.8 er 30 I w GS( D = 250 µA V Po 20 1.5 10 1.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold VoltageSingle Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 (A) 100 µs rrent 1 ms u C 1 10 ms Drain - 100 ms I D 1 s 0.1 10 s TA = 25 °C BVDSS DC Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 69939 4 S-80895-Rev. B, 21-Apr-08
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