New ProductSi7611DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 ransient 0.1 T 0.05 e v Notes: Impedance ffecti 0.02 E PDM Thermal 0.01 t1 t2 ormalized t1 1. Duty Cycle, D = N t2 2. Per Unit Base = R Single Pulse thJA = 81 °C/W 3. T (t) JM - TA = PDMZthJA 4. Surface Mounted 0.001 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 ransient T e v Impedance fecti 0.2 Ef Thermal 0.1 0.05 ormalized N 0.02 Single Pulse 0.1 10-3 10-2 10-1 10-4 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69939. www.vishay.com Document Number: 69939 6 S-80895-Rev. B, 21-Apr-08
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