link to page 3 link to page 3 NXP Semiconductors Product specification N-channel junction FET BF862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VDS drain-source voltage 20 V VDG drain-gate voltage 20 V VGS gate-source voltage 20 V IDS drain-source current 40 mA IG forward gate current 10 mA P tot total power dissipation Ts 90 C; note 1 300 mW Tstg storage temperature 65 +150 C Tj junction temperature 150 C Note 1. Main heat transfer is via the gate lead. THERMAL CHARACTERISTICSSYMBOLPARAMETERCONDITIONSVALUEUNIT Rth j-s thermal resistance from junction to soldering note 1 200 K/W point Note 1. Soldering point of the gate lead. MCD808 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 2000 Jan 05 3 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers
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