Datasheet BF862 (NXP) - 4

NXP Semiconductors Product specification N-channel junction FET BF862
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)GSS gate-source breakdown voltage IGS = 1 A; VDS = 0 20   V VGS gate-source forward voltage VDS = 0; IG = 1 mA   1 V VGSoff gate-source cut-off voltage VDS = 8 V; ID = 1 A 0.3 0.8 1.2 V IGSS reverse gate current VGS = 15 V; VDS = 0   1 nA IDSS drain-source current VGS = 0; VDS = 8 V 10  25 mA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y  fs common source forward transfer Tj = 25 C 35 45  mS admittance gos common source output conductance Tj = 25 C  180 400 S Ciss input capacitance f = 1 MHz  10  pF Crss reverse transfer capacitance f = 1 MHz  1.9  pF en equivalent noise input voltage f = 100 kHz  0.8  nV/Hz fT transition frequency  715  MHz 2000 Jan 05 4 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers