NXP Semiconductors Product specification N-channel junction FET BF862 MCD813 MCD814 30 20 handbook, halfpage handbook, halfpage I V D GS = 0 V ID (mA) (mA) 16 20 max −0.1 V 12 −0.2 V typ 8 −0.3 V 10 −0.4 V min 4 −0.5 V 0 0 −1 −0.8 −0.6 −0.4 −0.2 0 0 4 8 12 VDS (V) VGS (V) VDS = 8 V; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.7 Drain current as a function of gate-source Fig.8 Drain current as a function of drain-source voltage; typical values. voltage; typical values. − MCD815 MCD816 104 12 handbook, halfpage 10 mA handbook, halfpage IG ID = 20 mA 1 mA (nA) C (pF) − 0.1 mA 102 8 −1 Cis 4 I − GSS 10−2 Crs −10−4 0 0 5 10 15 20 25 −8 −6 −4 −2 0 VDG (V) VGS (V) VDS = 8 V; f = 1 MHz; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.10 Input and reverse transfer capacitance as Fig.9 Gate current as a function of drain-gate functions of gate-source voltage; typical voltage; typical values. values. 2000 Jan 05 6 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers
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