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DataSheets: Полевые транзисторы

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  1. Datasheet Toshiba TK2P90E
    Power MOSFET (N-ch 700V VDSS)
  2. Datasheet Rohm SCT3160KLHRC11
    Nch Silicon-carbide (SiC) MOSFET for Automotive AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
  3. Nch Silicon-carbide (SiC) MOSFET for Automotive AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
  4. Datasheet Rohm SCT3160KLGC11
    Nch Silicon-carbide (SiC) MOSFET SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
  5. Nch Silicon-carbide (SiC) MOSFET SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
  6. Datasheet Infineon IRLHM620TRPBF
    20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
  7. 20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
  8. P-Channel 2.5V Specified PowerTrench MOSFET -20V, -10A, 13mΩ
  9. N-Channel Enhancement Mode MOSFET
  10. N-Channel Enhancement Mode MOSFET
  11. Datasheet Vishay SiSF20DN-T1-GE3
    Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET Features TrenchFET® Gen IV power MOSFET Very low source-to-source on resistance Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
  12. Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET Features TrenchFET® Gen IV power MOSFET Very low source-to-source on resistance Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
  13. 650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
  14. Datasheet Nexperia GAN063-650WSAQ
    650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
  15. Datasheet Motorola MTD20P06HDL
    P Channel Enhancement Mode Silicon Gate TMOS Power FET Logic Level 15 Amperes 60 Volts RDS(on) = 175 MΩ This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy ...
  16. Datasheet Infineon IPP230N06L3 G
    MOSFET N-Ch 60V 30A TO220-3
  17. Datasheet Infineon IPB230N06L3 G
    MOSFET N-Ch 200V 30A D2PAK-2
  18. N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package This device is an N-channel Power MOSFET based on MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The ...
  19. N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ ...
  20. N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known ...
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