DataSheets: Полевые транзисторы

• Полупроводниковые приборы
• Дискретные приборы
• Транзисторы, транзисторные сборки и модули
• Полевые транзисторы

· Alpha & Omega · Ampleon · Avago Technologies · Central Semiconductor · Clare · Cree · Diodes · Efficient Power Conversion · Fairchild · Freescale · Fuji Electric · Inchange Semiconductor · Infineon · Integra Technologies · International Rectifier · International Wire · Intersil · IXYS · IXYS RF · Littelfuse · MCC · Microchip · Microsemi · Multicomp · New Jersey Semiconductor · Nexperia · NTE Electronics · NXP · ON Semiconductor · Panasonic · Renesas · Rohm · Sanyo · Semelab · Semikron · STMicroelectronics · Taiwan Semiconductor · Texas Instruments · Toshiba · Vishay · Wolfspeed · НИИЭТ

1. Datasheet Microchip MIC4609YWM

   600V three phase MOSFET or IGBT driver. The MIC4609 features a 300ns typical input filtering time to prevent unwanted pulses and a 550ns of propagation delay. The MIC4609 has TTL input thresholds. The robust operation of the MIC4609 ensures that ... Полевые транзисторы » Microchip » MIC4609 » MIC4609YWM

2. Datasheet Microchip MIC4609

   600V three phase MOSFET or IGBT driver. The MIC4609 features a 300ns typical input filtering time to prevent unwanted pulses and a 550ns of propagation delay. The MIC4609 has TTL input thresholds. The robust operation of the MIC4609 ensures that ... Полевые транзисторы » Microchip » MIC4609

3. Datasheet Microchip MIC4609YWM-TR

   600V three phase MOSFET or IGBT driver. The MIC4609 features a 300ns typical input filtering time to prevent unwanted pulses and a 550ns of propagation delay. The MIC4609 has TTL input thresholds. The robust operation of the MIC4609 ensures that ... Полевые транзисторы » Microchip » MIC4609 » MIC4609YWM-TR

4. Datasheet Infineon IGLD60R190D1AUMA1

   Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability Полевые транзисторы » Infineon » IGLD60R190D1 » IGLD60R190D1AUMA1

5. Datasheet Infineon IGLD60R190D1

   Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability Полевые транзисторы » Infineon » IGLD60R190D1

6. Datasheet Infineon IGT40R070D1 E8220

   Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability Полевые транзисторы » Infineon » IGT40R070D1 E8220

7. Datasheet Infineon IGT40R070D1E8220ATMA1

   Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability Полевые транзисторы » Infineon » IGT40R070D1 E8220 » IGT40R070D1E8220ATMA1

8. Datasheet International Rectifier IFR3205

   Power MOSFET The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 Watts. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating ... Полевые транзисторы » International Rectifier » IFR3205 » IFR3205

9. Datasheet Alpha & Omega AOTL66912

   100V N-Channel AlphaSGT Полевые транзисторы » Alpha & Omega » AOTL66912 » AOTL66912

10. Datasheet Alpha & Omega AOTL66610

    60V N-Channel AlphaSGT Полевые транзисторы » Alpha & Omega » AOTL66610 » AOTL66610

11. Datasheet Alpha & Omega AOTL66608

    60V N-Channel AlphaSGT Полевые транзисторы » Alpha & Omega » AOTL66608 » AOTL66608

12. Datasheet Infineon SPD50P03LGBTMA1

    Полевые транзисторы » Infineon » SPD50P03L G » SPD50P03LGBTMA1

13. Datasheet Infineon SPD50P03L G

    Полевые транзисторы » Infineon » SPD50P03L G

14. Datasheet Fairchild RF1S30N06LESM

    30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs Полевые транзисторы » Fairchild » RF1S30N06LESM » RF1S30N06LESM

15. Datasheet Fairchild RFP30N06LE

    30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs Specifications: P30N06LE Полярность транзистора: N Channel Continuous Drain Current Id: 30 А Drain Source Voltage Vds: 60 В On Resistance Rds(on): 47 МОм Rds(on) Test Voltage Vgs: ... Полевые транзисторы » Fairchild » RFP30N06LE » RFP30N06LE

16. Datasheet Toshiba TK65S04N1L

    Power MOSFET (N-ch single 30V VDSS≤60V) Полевые транзисторы » Toshiba » TK65S04N1L » TK65S04N1L

17. Datasheet Vishay Si2312CDS

    N-Channel 20 V (D-S) MOSFET TrenchFET® power MOSFET 100% Rg tested Полевые транзисторы » Vishay » Si2312CDS

18. Datasheet Vishay SI2312CDS-T1-GE3

    N-Channel 20 V (D-S) MOSFET TrenchFET® power MOSFET 100% Rg tested Полевые транзисторы » Vishay » Si2312CDS » SI2312CDS-T1-GE3

19. Datasheet Vishay SQJ457EP-T1_GE3

    Automotive P-Channel 60 V (D-S) 175 C MOSFET TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Package: PowerPAK SO-8L Полевые транзисторы » Vishay » SQJ457EP » SQJ457EP-T1_GE3

20. Datasheet Vishay SQJ457EP

    Automotive P-Channel 60 V (D-S) 175 C MOSFET TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Package: PowerPAK SO-8L Полевые транзисторы » Vishay » SQJ457EP