DataSheets: Полевые транзисторы

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1. Datasheet Toshiba TK2P90E

   Power MOSFET (N-ch 700V VDSS) Полевые транзисторы » Toshiba » TK2P90E » TK2P90E

2. Datasheet Rohm SCT3160KLHRC11

   Nch Silicon-carbide (SiC) MOSFET for Automotive AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Полевые транзисторы » Rohm » SCT3160KLHR » SCT3160KLHRC11

3. Datasheet Rohm SCT3160KLHR

   Nch Silicon-carbide (SiC) MOSFET for Automotive AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Полевые транзисторы » Rohm » SCT3160KLHR

4. Datasheet Rohm SCT3160KLGC11

   Nch Silicon-carbide (SiC) MOSFET SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Полевые транзисторы » Rohm » SCT3160KL » SCT3160KLGC11

5. Datasheet Rohm SCT3160KL

   Nch Silicon-carbide (SiC) MOSFET SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Полевые транзисторы » Rohm » SCT3160KL

6. Datasheet Infineon IRLHM620TRPBF

   20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package Полевые транзисторы » Infineon » IRLHM620 » IRLHM620TRPBF

7. Datasheet Infineon IRLHM620

   20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package Полевые транзисторы » Infineon » IRLHM620

8. Datasheet ON Semiconductor FDS6575

   P-Channel 2.5V Specified PowerTrench MOSFET -20V, -10A, 13mΩ Полевые транзисторы » ON Semiconductor » FDS6575 » FDS6575

9. Datasheet Diodes ZVN4210GTA

   N-Channel Enhancement Mode MOSFET Полевые транзисторы » Diodes » ZVN4210G » ZVN4210GTA

10. Datasheet Diodes ZVN4210G

    N-Channel Enhancement Mode MOSFET Полевые транзисторы » Diodes » ZVN4210G

11. Datasheet Vishay SiSF20DN-T1-GE3

    Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET Features TrenchFET® Gen IV power MOSFET Very low source-to-source on resistance Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package Полевые транзисторы » Vishay » SiSF20DN » SiSF20DN-T1-GE3

12. Datasheet Vishay SiSF20DN

    Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET Features TrenchFET® Gen IV power MOSFET Very low source-to-source on resistance Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package Полевые транзисторы » Vishay » SiSF20DN

13. Datasheet Nexperia GAN063-650WSA

    650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ... Полевые транзисторы » Nexperia » GAN063-650WSA

14. Datasheet Nexperia GAN063-650WSAQ

    650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ... Полевые транзисторы » Nexperia » GAN063-650WSA » GAN063-650WSAQ

15. Datasheet Motorola MTD20P06HDL

    P Channel Enhancement Mode Silicon Gate TMOS Power FET Logic Level 15 Amperes 60 Volts RDS(on) = 175 MΩ This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy ... Полевые транзисторы » Motorola » MTD20P06HDL » MTD20P06HDL

16. Datasheet Infineon IPP230N06L3 G

    MOSFET N-Ch 60V 30A TO220-3 Полевые транзисторы » Infineon » IPP230N06L3 G » IPP230N06L3 G

17. Datasheet Infineon IPB230N06L3 G

    MOSFET N-Ch 200V 30A D2PAK-2 Полевые транзисторы » Infineon » IPB230N06L3 G » IPB230N06L3 G

18. Datasheet STMicroelectronics STW88N65M5-4

    N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package This device is an N-channel Power MOSFET based on MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The ... Полевые транзисторы » STMicroelectronics » STW88N65M5-4 » STW88N65M5-4

19. Datasheet STMicroelectronics STWA88N65M5

    N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ ... Полевые транзисторы » STMicroelectronics » STWA88N65M5 » STWA88N65M5

20. Datasheet STMicroelectronics STW88N65M5

    N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known ... Полевые транзисторы » STMicroelectronics » STW88N65M5 » STW88N65M5