Datasheets » Биполярные транзисторы
DataSheets: Биполярные транзисторы
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Small Signal PNP Transistor The 2N4033 is a silicon Planar Epitaxial PNPtransistor in Jedec TO-39 metal case primaryintended for large signal, low noise industrialapplications.
PNP транзистор общего назначения Полярность транзистора: PNP Collector Emitter Voltage V(br)ceo: 80 В Частота единичного усиления типовая: 150 МГц Power Dissipation Pd: 800 мВт DC Collector Current: 1 А Корпус транзистора: TO-39 Количество выводов: ...- NPN Silicon Low Power Transistors
- NPN Silicon Low Power Transistors
- NPN Silicon Low Power Transistors
- NPN Silicon Low Power Transistors
- NPN Silicon Low Power Transistors
- NPN Silicon Low Power Transistors
- NPN Silicon Low Power Transistors
- MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor The ON Semiconductor 2N3019, 2N3019S and 2N3700 low power NPN silicon transistors are on the US DLA Land and Maritime Qualified Products List (QPL) and available in versions meeting JAN, ...
- MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor The ON Semiconductor 2N3019, 2N3019S and 2N3700 low power NPN silicon transistors are on the US DLA Land and Maritime Qualified Products List (QPL) and available in versions meeting JAN, ...
- MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor The ON Semiconductor 2N3019, 2N3019S and 2N3700 low power NPN silicon transistors are on the US DLA Land and Maritime Qualified Products List (QPL) and available in versions meeting JAN, ...
- MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor The ON Semiconductor 2N3019, 2N3019S and 2N3700 low power NPN silicon transistors are on the US DLA Land and Maritime Qualified Products List (QPL) and available in versions meeting JAN, ...
- Silicon Planar Epitaxial NPN transistor
Bipolar (BJT) Single Transistor, NPN, 80 V, 400 MHz, 800 mW, 1 A, 50 hFE- PNP малосигнальный биполярный транзистор Полярность транзистора: PNP Collector Emitter Voltage V(br)ceo: 80 В Power Dissipation Pd: 7 Вт DC Collector Current: -1 А DC Current Gain Max (hfe): 300 Рабочий диапазон температрур: от -65 C до +200 C ...
- NPN малосигнальный биполярный транзистор Полярность транзистора: NPN Collector Emitter Voltage V(br)ceo: 80 В Частота единичного усиления типовая: 400 МГц Power Dissipation Pd: 800 мВт DC Collector Current: 1 А Рабочий диапазон температрур: от -65 ...
- PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
- PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
- PNP Bipolar Small Signal Transistor The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
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